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absolute maximum ratings parameter units i d @ v gs = 4.5v, t c = 25c continuous drain current 0.8 i d @ v gs = 4.5v, t c = 100c continuous drain current 0.5 i dm pulsed drain current 3.2 p d @ t c = 25c max. power dissipation 0.6 w linear derating factor 0.005 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 26.6 mj i ar avalanche current 0.8 a e ar repetitive avalanche energy 0.06 mj dv/dt peak diode recovery dv/dt 4.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (for 5s) weight 43 (typical) mg c a www.irf.com 1 for footnotes refer to the last page features : 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight complimentary p-channel available - irhlub7970z4, irhlubn7970z4 irhlubc7970z4 & irhlubcn7970z4 international rectifiers r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl controlcircuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and postradiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers. pre-irradiation ub (shielded metal lid) radiation hardened jansr2n7616ublogic level power mosfet 60v, n-channel surface mount (ub) ref: mil-prf-19500/744 technology irhlub770z4 part number radiation level r ds(on) i d qpl part number irhlub770z4 100k rads (si) 0.68 ? 0.8a jansr2n7616ub irhlub730z4 300k rads (si) 0.68 ? 0.8a jansf2n7616ub product summaryrefer to page 11 for 3 additional part numbers - irhlubn770z4, irhlubc770z4, irhlubcn770z4 pd-95813h downloaded from: http:///
2 www.irf.com pre-irradiation irhlub770z4, jansr2n7616ub source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 0.8 i sm pulse source current (body diode) 3.2 v sd diode forward voltage 1.2 v t j = 25c, i s = 0.8a, v gs = 0v t rr reverse recovery time 78 ns t j = 25c, i f = 0.8a, di/dt 100a/ s q rr reverse recovery charge 75 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thja junction-to-ambient 200 c/w note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown 0.07 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.68 ? v gs = 4.5v, i d = 0.5a resistance v gs(th) gate threshold voltage 1.0 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient -4.04 mv/c g fs forward transconductance 0.23 s v ds = 10v, i ds = 0.5a i dss zero gate voltage drain current 1.0 v ds = 48v ,v gs =0v 1 0 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v q g total gate charge 3.6 v gs = 4.5v, i d = 0.8a q gs gate-to-source charge 1.5 nc v ds = 30v q gd gate-to-drain (miller) charge 1.8 t d (on) turn-on delay time 8.0 v dd = 30v, i d = 0.8a, t r rise time 24 v gs = 5.0v, r g = 24 ? t d (off) turn-off delay time 30 t f fall time 13 l s + l d total inductance 8.4 ciss input capacitance 166 v gs = 0v, v ds = 25v c oss output capacitance 42 pf f = 100khz c rss reverse transfer capacitance 3.5 na nh ns a measured from the center of drain pad to center of source pad r g gate resistance 14 ? f = 1.0mhz, open drain downloaded from: http:///
www.irf.com 3 irhlub770z4, jansr2n7616ub pre-irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil-ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward 100 na v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v i dss zero gate voltage drain current 1.0 a v ds = 48v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) 0.55 ? v gs = 4.5v, i d = 0.5a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 0.8a resistance (ub) 0.68 ? v gs = 4.5v, i d = 0.5a 1. part numbers irhlub770z4, irhlub730z4 and additional part numbers listed on page 11. radiation characteristics table 2. typical single event effect safe operating area let ener gy ran g ev d s ( v ) (mev/(mg/cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -2v -4v -5v -6v -7v 38 5% 300 7.5% 38 7.5% 60 60 60 60 60 35 62 5% 355 7.5% 33 7.5% 60 60 60 60 30 - 85 5% 380 7.5% 29 7.5% 60 60 60 40 - - 0 10 20 30 40 50 60 70 -7 -6 -5 -4 -3 -2 -1 0 vgs vds let=38 5% let=62 5% let=85 5% downloaded from: http:///
4 www.irf.com pre-irradiation irhlub770z4, jansr2n7616ub fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 10v 4.5v 3.5v 3.0v 2.75v 2.5v 2.25v bottom 2.0v 2.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.0v vgs top 10v 4.5v 3.5v 3.0v 2.75v 2.5v 2.25v bottom 2.0v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 0.8a downloaded from: http:///
www.irf.com 5 irhlub770z4, jansr2n7616ub pre-irradiation fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 55 60 65 70 75 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d , drain current (a) 0.2 0.4 0.6 0.8 1.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = 4.5v 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 0.8a t j = 25c t j = 150c downloaded from: http:///
6 www.irf.com pre-irradiation irhlub770z4, jansr2n7616ub 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 t , case temperature ( c) i , drain current (a) c d fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 11. typical source-drain diode forward voltage 1 10 100 0 50 100 150 200 250 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c fig 12. maximum drain current vs. case temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 0.8a for test circuit see figure 17 downloaded from: http:///
www.irf.com 7 irhlub770z4, jansr2n7616ub pre-irradiation fig 15. maximum effective transient thermal impedance, junction-to-ambient fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.4a 0.5a bottom 0.8a 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s dc downloaded from: http:///
8 www.irf.com pre-irradiation irhlub770z4, jansr2n7616ub q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + - downloaded from: http:///
www.irf.com 9 irhlub770z4, jansr2n7616ub pre-irradiation 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 1.42 [.056] 1.17 [.046] 3x 0.355 [.014] mi n. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dimens ions are s hown in millime t e rs [inches ]. 1. dimens ioning & t ole rancing per as me y14.5m-1994 2. controlling dimens ion: inch. not es: 4. hat ched are as on package de not e met aliz at ion are as . 5. pad as s ignment s : 1 = gat e , 2 = s ource, 3 = drain, 4 = is olat e d me t al lid. 4 me t al l i d case outline and dimensions ub (shielded metal lid connected to 4th pad) 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 1.42 [.056] 1.17 [.046] 3x 0.355 [.014] min. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dimens ions are shown in millimet ers [inches ]. 1. dimens ioning & t olerancing per as me y14.5m-1994 2. controlling dimension: inch. not es : 4. hatched areas on package denote metalization areas. 5. pad as s ignment s : 1 = gat e , 2 = s ource , 3 = drain, 4 = s hie lding conne ct e d t o t he lid. 4 0.30 r re f . [.012 r ref.] 4 0.55 r min. [.022 r min.] me t al l i d case outline and dimensions ubn (isolated metal lid, no 4th pad) downloaded from: http:///
10 www.irf.com pre-irradiation irhlub770z4, jansr2n7616ub 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 3x 0.355 [.014] min. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dime ns ions are s hown in millime t e rs [inches ]. 1. dime ns ioning & t ole rancing per as me y14.5m-1994 2. cont rolling dimens ion: inch. not es : 4. hatched areas on package denote metalization areas. 5. pad as s ignme nt s : 1 = gat e, 2 = s ource, 3 = drain, 4 = is ol at e d ceramic lid. 4 1.75 [.069] 1.40 [.055] ce r ami c l i d 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 3x 0.355 [.014] min. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dimens ions are s hown in millimet ers [inches ]. 1. dimens ioning & t olerancing pe r as me y14.5m-1994 2. cont rolling dimens ion: inch. not es : 4. hatched areas on package denote metalization areas. 5. pad as s ignment s : 1 = gat e, 2 = s ource, 3 = drain, 4 = s hie lding co nnect e d t o t he lid. 0.30 r ref. [.012 r ref .] 4 0.55 r min. [.022 r min.] 1.75 [.069] 1.40 [.055] 4 ce r ami c l i d case outline and dimensionsubc (shielded ceramic lid connected to 4th pad) case outline and dimensions ubcn (isolated ceramic lid, no 4th pad) downloaded from: http:///
www.irf.com 11 irhlub770z4, jansr2n7616ub pre-irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 83 mh peak i l = 0.8a, v gs = 10v i sd 0.8a, di/dt 130a/ s, v dd 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 11/ part number radiation level r ds(on) i d qpl part number irhlubn770z4 100k rads (si) 0.68 ? 0.8a jansr2n7616ubn irhlubn730z4 300k rads (si) 0.68 ? 0.8a jansf2n7616ubn ubn (isolated metal lid) product summary part number radiation level r ds(on) i d qpl part number irhlubc770z4 100k rads (si) 0.68 ? 0.8a jansr2n7616ubc irhlubc730z4 300k rads (si) 0.68 ? 0.8a jansf2n7616ubc ubc (shielded ceramic lid) part number radiation level r ds(on) i d qpl part number irhlubcn770z4 100k rads (si) 0.68 ? 0.8a jansr2n7616ubcn irhlubcn730z4 300k rads (si) 0.68 ? 0.8a jansf2n7616ubcn ubcn (isolated ceramic lid) product summary product summary additional product summaries (continued from page 1 and 3) downloaded from: http:///

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